Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates

Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the p...

effect of seed priming and irrigation regimes on yield,yield components and quality of safflowers cultivars

این مطالعه در سال 1386-87 در آزمایشگاه و مزرعه پژوهشی دانشگاه صنعتی اصفهان به منظور تعیین مناسب ترین تیمار بذری و ارزیابی اثر پرایمینگ بر روی سه رقم گلرنگ تحت سه رژیم آبیاری انجام گرفت. برخی از مطالعات اثرات سودمند پرایمینگ بذر را بر روی گیاهان مختلف بررسی کرده اند اما در حال حاضر اطلاعات کمی در مورد خصوصیات مربوط به جوانه زنی، مراحل نموی، عملکرد و خصوصیات کمی و کیفی بذور تیمار شده ژنوتیپ های م...

Nucleation and Growth of b-Axis Oriented PrBa2Cu3O7 x Thin Films on LaSrGaO4 (100) Substrates

Confocal Raman Spectroscopy and AFM for Evaluation of Sidewalls in Type II Superlattice FPAs

We propose to utilize confocal Raman spectroscopy combined with high resolution atomic force microscopy (AFM) for nondestructive characterisation of the sidewalls of etched and passivated small pixel (24μm×24μm) focal plane arrays (FPA) fabricated using LW/LWIR InAs/GaSb type-II strained layer superlattice (T2SL) detector material. Special high aspect ratio Si and GaAs AFM probes, with tip leng...